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        CDSSC4148N-G SMD Switching Diode Page 1 QW-B0049 REV:A Dimensions in inches and (millimeter) 0805 Features -Designed for mounting on small surface. -Silicon Epitaxial Planar Diode. -Fast switching diode. Mechanical data -Case: 0805 -Marking: Cathode Band. -W eight: 0.006 gram(approx.). -Lead free V oltage: 75 V Current: 150mA RoHS Device 0.057(1.45) 0.041(1.05) 0.087(2.20) 0.071(1.80) 0.037(0.95) 0.029(0.75) 0.026(0.65) 0.010(0.25) Parameter Symbol Value Unit 200 mW Ptot Junction Temperature 150 TJ Operating & S torage Temperature Range -55 to +1 50 TSTG °C Thermal R esistance Ju nction to Ambient Air R?JA 375 °C/W °C 1.60 mW/°C Forward Power Dissipation Power derating above 25 °C Parameter Symbol Value Unit 100 V VRMM Repetitive Pe ak Fo rward C urrent at Tamb=25°C 300 IFRM Non-Repetitive Surge Fo rward C urrent at t<1s an d Tj=25°C IFSM 500 mA mA 150 mA Pepetitive Peak Reverse Voltage A resistive load verage rectified current sin half wave rectification with IF(AV) a t t≤8.3ms an d Tj=25°C 1000 mA Maximum Rating (Parameter at Tamb = 25°C )1) 1 .) Valid pr ovided th at components are kept at ambient temperature. Electrical Characteristics (Parameter at Tamb = 25°C )1) Parameter Symbol Value Unit 1.0 V VF IR Reverse R ecovery T ime at IF=IR=10mA, R L=100? 4 Trr ns Capacitance at V R=0V,f=1MHz Ctot 4 pF 1.25 V MAX. Forward Voltage at IF=10mA at I F=100mA 0.025 uA 5 uA MAX. Leakage Current at VR=20V at V R=75V Thermal Characteristics (Parameter at Tamb = 25°C )1) N otes: |